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2SD878 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) High Power Dissipation High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High power amplifier applications.

High power switching application

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Datasheet Details

Part number 2SD878
Manufacturer INCHANGE
File Size 199.70 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor 2SD878 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·High Power Dissipation ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications. ·High power switching applications. ·DC-DC converter applications. ·Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 7 A 115 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.
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