2SD878
2SD878 is NPN Transistor manufactured by Toshiba.
FEATURES
- High Power Dissipation : F C =115W (Tc=25°C)
- High Collector Current : I C=15A
- Low Saturation Voltage : V CE ( sat )=0. 3V (Typ. ) (I C=4A)
INDUSTRIAL APPLICATIONS Unit in mm j2fe5.0MAX.
^gfe LOMA
,
^
_, -1-0.09
,01.0- 0.04
30.2±0.2 ia9±a24 i Ot- cic S
+ 1
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation--,, .
Junction Temperature Storage Temperature Range
SYMBOL
VCBO VCEO Ve BO IC IB PC
Tj
Tstg
ELECTRICAL CHARACTERISTICS CHARACTERISTIC
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency
(Ta=25°C) SYMBOL
ICBO JEBO v (BR) CEO h FE(l) h FE(2)
V...
