2SD878 - NPN Transistor

Toshiba

Key Features

High Power Dissipation : F C =115W (Tc=25°C).
High Collector Current : I C=15A.
Low Saturation Voltage : V CE ( sat )=0. 3V (Typ. ) (I C=4A).

2SD878 npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SD878
Manufacturer	Toshiba
File Size	115.16 KB
Description	NPN Transistor
Datasheet	2SD878 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SD878	NPN Transistor	INCHANGE
2SD870	NPN Transistor	INCHANGE
2SD870	SILICON POWER TRANSISTOR	SavantIC
2SD871	NPN Transistor	INCHANGE
2SD871	SILICON POWER TRANSISTOR	SavantIC

Other Datasheets by Toshiba

Part Number	Description
2SD870	NPN Transistor
2SD871	NPN Transistor
2SD873	NPN Transistor
2SD877	NPN Transistor
2SD811	Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

: 2SD878 I SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS. FEATURES • High Power Dissipation : F C =115W (Tc=25°C) • High Collector Current : I C=15A • Low Saturation Voltage : V CE ( sat )=0. 3V (Typ. ) (I C=4A) INDUSTRIAL APPLICATIONS Unit in mm j2fe5.0MAX. ^gfeLOMA , ^ _, -1-0.09 ,01.0— 0.04 30.2±0.2 ia9±a24 iOt- cicS + 1 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation--,, .