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2SD898 - NPN Transistor

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Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2.5A Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in

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Datasheet Details

Part number 2SD898
Manufacturer INCHANGE
File Size 210.60 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD898 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 2.5A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3 A ICM Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 3.5 A 50 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.
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