Datasheet Details
| Part number | 2SD985 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.04 KB |
| Description | NPN Transistor |
| Datasheet | 2SD985-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD985 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.04 KB |
| Description | NPN Transistor |
| Datasheet | 2SD985-INCHANGE.pdf |
|
|
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·Collector–Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.) ·DC Current Gain- : hFE = 2000(Min) @ IC= 1A ·Low Collector Saturation Voltage ·Complement to Type 2SB794 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·They are suitable for use to operate from IC without predriver, such as hammer driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Pulse 3.0 A IB Base Current Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.15 A 1.0 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD985 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD985 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD985 | (2SD985 / 2SD986) NPN SILICON DARLINGTON POWER TRANSISTORS | NEC |
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2SD985 | (2SD985 / 2SD986) SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD986 | NPN Transistor |
| 2SD900 | NPN Transistor |
| 2SD904 | NPN Transistor |
| 2SD907 | NPN Transistor |
| 2SD909 | NPN Transistor |
| 2SD911 | NPN Transistor |
| 2SD916 | NPN Transistor |
| 2SD917 | NPN Transistor |
| 2SD920 | NPN Transistor |
| 2SD928 | NPN Transistor |