Inchange Semiconductor 2SD985
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD985 |
|---|---|
| Datasheet | 2SD985 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector–Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.)●DC Current Gain- : hFE = 2000(Min) @ IC= 1A
●Low Collector Saturation Voltage
●Complement to Type 2SB794
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●They are suitable for use to operate from IC without predriver, such as hammer driver.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Pulse 3.0 A IB Base Current Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.15 A 1.0 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD985 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD985ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter...