Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- Collector- Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min.)
- DC Current Gain-
: hFE = 2000(Min) @ IC= 1A
- Low Collector Saturation Voltage
- plement to Type 2SB795
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- They are suitable for use to operate from IC without predriver, such as hammer...
