Datasheet Details
| Part number | 2SD993 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.26 KB |
| Description | NPN Transistor |
| Datasheet | 2SD993-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD993 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.26 KB |
| Description | NPN Transistor |
| Datasheet | 2SD993-INCHANGE.pdf |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 10V(Max.)@ IC= 2.5A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 6 A 50 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ 2SD993 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0;
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