Inchange Semiconductor 2SK1675
N-Channel MOSFET Transistor
DESCRIPTION
●Drain Current –ID=30A@ TC=25℃●Drain Source Voltage- : VDSS=250V(Min)
APPLICATIONS
●high Current, high speed power switchingABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 250 ±20 V V Drain Current-continuous@ TC=25℃ 30 A Total Dissipation@TC=25℃ 250 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ isc website: 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2SK1675●
ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=15A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=250V; VGS= 0 MIN TYP MAX UNIT 250 V 2.0 4.0 V 0.13 Ω ±100 nA 500 uA isc website: 2 isc & iscs...