Inchange Semiconductor 2SK1677
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SK1677 |
|---|---|
| Datasheet | 2SK1677 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Drain Current –ID=16A@ TC=25℃●Drain Source Voltage- : VDSS=450V(Min)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●high Current, high speed power switchingABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 16 A Ptot Total Dissipation@TC=25℃ 200 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1677 isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor●
ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=8A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 2SK1677 MIN TYP MAX UNIT 450 V 2.0 4.0 V 0.39 Ω ±100 nA 500 uA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.