Inchange Semiconductor 2SK3745LS
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.2SK3745LS Specifications
- Package : TO-220-3
- Mount Type : Through Hole
- Breakdown Voltage : 1.5kV
- RDS(on) Max : 13Ω
- Input Capacitance : 380pF
- Terminals : 3
- Rise Time : 37ns
- Fall Time : 59ns
- Max Power Dissipation : 35W
- Power Dissipation : 2W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | 2SK3745LS |
|---|---|
| Datasheet | 2SK3745LS Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current : ID= 2.0A@ TC=25℃●Drain Source Voltage : VDSS= 1500V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 13Ω(Max) @ VGS= 10V
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRIPTION
●motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1500 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 2.0 A IDM Drain Current-Single Pluse 4.0 A PD Total Dissipation @TC=25℃ 35 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 3.57 UNIT ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(...