onsemi 2SK3745LS
N-Channel Power MOSFET
FEATURES
● Low ON-resistance, low input capacitance, ultrahigh-speed switching● High reliability (Adoption of HVP process)
● Micaless package facilitating mounting
● Avalanche resistance guarantee Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID* IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *Shows chip capability *1 VDD=50V, L=20mH, IAV=2A (Fig.1) *2 L≤20mH, single pulse Tch Tstg EAS IAV Tc=25°C Conditions Ratings 1500 ±20 2 4 2.0 35 150 --55 to +150 41 2 Unit V V A A W W °C °C mJ A Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit...