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2SK3878 - N-Channel MOSFET

Key Features

  • Drain Current.
  • ID= 9A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 900V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max).
  • Avalanche Energy Specified.
  • Fast Switching.
  • Simple Drive Requirements.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription (Reference)

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isc N-Channel Mosfet Transistor FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for a load switch or in PWM applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Plused 27 A PD Total Dissipation @TC=25℃ 150 W Tj Max.