Datasheet Summary
isc N-Channel Mosfet Transistor
Features
- Drain Current
- ID= 9A@ TC=25℃
- Drain Source Voltage-
: VDSS= 900V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 1.3Ω(Max)
- Avalanche Energy Specified
- Fast Switching
- Simple Drive Requirements
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for a load switch or in PWM applications
-...
