Inchange Semiconductor 2SK3880
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SK3880 |
|---|---|
| Datasheet | 2SK3880 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current : ID= 6.5A@ TC=25℃●Drain Source Voltage : VDSS= 800V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 1.7Ω(Max)
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRIPTION
●motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6.5 A IDM Drain Current-Single Pluse 19.5 A PD Total Dissipation @TC=25℃ 80 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.56 UNIT ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage RDS(on) Drain-S...