PNP Transistor
| Part number | 3CD3C |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.30 KB |
| Description | PNP Transistor |
| Datasheet | 3CD3C-INCHANGE.pdf |
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1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=- 3mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=- 3mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 0.5A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
3CD3001 | TO-251 Plastic Encapsulate Transistors | Jiangsu Changjiang |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 3CD6D | PNP Transistor |
| 3CD834 | PNP Transistor |
| 3CD9A | PNP Transistor |
| 3CD9B | PNP Transistor |
| 3CD9C | PNP Transistor |
| 3CD9D | PNP Transistor |
| 3CD9F | PNP Transistor |
