3CD9A Description
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor 3CD9A TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=- 10mA ; IB= 0 VEBO(BR) Emitter-Base Breakdown Voltage IE=- 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 7.5A;.