Inchange Semiconductor 3CD9D
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 3CD9D |
|---|---|
| Datasheet | 3CD9D Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●With TO-3 packaging●Large collector current
●Low collector saturation voltage
●High power dissipation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in DC-DC converter●Driver of solenoid or motor
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -15 A PC Collector Power Dissipation@Tc=75℃ 150 W TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.66 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor 3CD9DELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=- 10mA ; IB= 0 VEBO(BR) Emitter-Base Breakdown Voltage IE=- 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 7.5A; IB= -1.5A VBE(sat) Base-Emitter Saturation Voltage IC= -7.5A; IB= -1.