3DA608 datasheet by Inchange Semiconductor.
| Part number | 3DA608 |
|---|---|
| Datasheet | 3DA608-INCHANGE.pdf |
| File Size | 238.81 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 3DA608 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=10mA; IE=0 3 mA IEBO Emitter Cutoff current VEB=3V; IC=0 3 mA hFE DC Current Gain IC=7.5A.
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