Inchange Semiconductor 3DA608
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 3DA608 |
|---|---|
| Datasheet | 3DA608 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain- : hFE: 20-180@IC= 7.5A●Excellent Safe Operating Area
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use as an output device in complementary audio amplifiersABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 3DA608A 3DA608B 3DA608C 3DA608D 3DA608E 3DA608F 3DA608A 3DA608B 3DA608C 3DA608D 3DA608E 3DA608F VEBO Emitter-Base Voltage VALUE 40 60 90 110 160 230 30 50 80 100 150 200 4 UNIT V V V ICM Pulsed Collector Current 10 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -55-175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.5 UNIT ℃/W 3DA608 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 3DA608ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) C...