3DA608
3DA608 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High DC Current Gain-
: h FE: 20-180@IC= 7.5A
- Excellent Safe Operating Area
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use as an output device in plementary audio amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO VCEO
Collector-Base Voltage Collector-Emitter Voltage
3DA608A 3DA608B 3DA608C 3DA608D 3DA608E 3DA608F 3DA608A 3DA608B 3DA608C 3DA608D 3DA608E 3DA608F
VEBO
Emitter-Base Voltage
VALUE
40 60 90 110 160 230 30 50 80 100 150 200
UNIT V
Pulsed Collector Current
Collector Power Dissipation@TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55-175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 1.5
UNIT ℃/W
3DA608 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power...
