| Part number | 3DD5606 |
|---|---|
| Datasheet | 3DD5606-INCHANGE.pdf |
| File Size | 205.52 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A ;IB= 0.4A ICBO Collector Cutoff Current VCB= 1600V; IE=0 IEBO Emitter Cutoff Current VEB= 9V;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
3DD5606 | CASE-RATED BIPOLAR TRANSISTOR | JILIN SINO-MICROELECTRONICS |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 3DD523 | NPN Transistor |
| 3DD5E | Silicon NPN Power Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
| 3DD100E | NPN Transistor |
| 3DD101C | NPN Transistor |
| 3DD101D | NPN Transistor |
| 3DD101E | NPN Transistor |
