3DD5606
DESCRIPTION
- High breakdown voltage
- High switching speed
- High current capability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Energy-saving ligh
- Electronic ballasts
- High frequency switching power supply
- High frequency power transform
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150...
