Inchange Semiconductor 4N10
N-Channel MOSFET Transistor
| Part No. | 4N10 |
|---|---|
| Datasheet | 4N10 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current ID= 4A@ TC=25℃●Drain Source Voltage- : VDSS= 100V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max)
●Fast Switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●Switching power supplies,converters,AC and DC motor controls●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Plused 16 A PD Total Dissipation @TC=25℃ 20 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature●THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.63 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W 4N10 isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor
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ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Break...