• Part: 4N10
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: XuanXinWei
  • Size: 1.88 MB
4N10 Datasheet (PDF) Download
XuanXinWei
4N10

Description

The 4N10 I uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Key Features

  • VDS = 100V ID = 3.8A RDS(ON) < 240mΩ @ VGS=10V
4N10 datasheet preview

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