4N150
Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
Key Features
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Fully isolated TO-3PF plastic packages
- Creepage distance path is 5.4 mm (typ.) for
Applications
- Switching applications
