4N150-P Overview
The UTC 4N150-P is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
4N150-P Key Features
- RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=2.0A
- High Switching Speed
- SYMBOL
- ORDERING INFORMATION
- MARKING
