4N150-P
Description
The UTC 4N150-P is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.
Key Features
- RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=2.0A
- High Switching Speed
