4N150
Description
The UTC 4N150 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Key Features
- RDS(ON) ≤ 6.5 Ω @ VGS=10V, ID=2.0A
- High Switching Speed
- 100% Avalanche Tested
