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4N100-FCQ - N-CHANNEL MOSFET

General Description

The UTC 4N100-FCQ provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) ≤ 6.7 Ω @ VGS=10V, ID=1.0A.
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 2.Drain TO-220F 1 1 TO-251 Power MOSFET 1 TO-220F1 TO-220F2 1 TO-252 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 4N100-FCQ Preliminary 4A, 1000V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 4N100-FCQ provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 6.7 Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL 2.Drain TO-220F 1 1 TO-251 Power MOSFET 1 TO-220F1 TO-220F2 1 TO-252 1.Gate 3.