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4N100-FC - N-CHANNEL POWER MOSFET

General Description

The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S0.
  • RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness 1 1 TO-220F1 TO-220F2.
  • SYMBOL.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 4N100-FC 4.0A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 TO-220 Power MOSFET 1 TO-220F  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.