Inchange Semiconductor 4N50
N-Channel MOSFET Transistor
| Part No. | 4N50 |
|---|---|
| Datasheet | 4N50 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current ID= 4A@ TC=25℃●Drain Source Voltage- : VDSS= 500V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max)
●Fast Switching
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APPLICATIONS
●Switch mode power supply.●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 500 ±20 V V ID Drain Current-Continuous 4A IDM Drain Current-Single Plused 12 A PD Total Dissipation @TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.67 ℃/W isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 4N50
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ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Bo...