Unisonic Technologies 4N50
4N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.DESCRIPTION
The UTC The UTC 4N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.●
FEATURES
* ID= 4A * VDS=500V * RDS(ON)=2.0Ω @ VGS=10V * High Switching Speed * 100% Avalanche Tested 1 1 1 Power MOSFET 1 TO-252 TO-251 TO-220 TO-220F● SYMBOL 2.Drain 1.Gate 3.Source
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N50L-TA3-T 4N50G-TA3-T 4N50L-TF3-T 4N50G-TF3-T 4N50L-TM3-T 4N50G-TM3-T 4N50L-TN3-R 4N50G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-251 TO-252 Pin Assignment 123 GDS GDS GDS GDS Packing Tube Tube Tube Tape Reel Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-525.E 4N50 Power MOSFET
●
ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous (TC=25°C) Pulsed (Note 3) ID IDM 4 16 (N...