Datasheet4U Logo Datasheet4U.com

50N06FI - N-Channel MOSFET

General Description

Drain Current ID=27A@ TC=25℃ Drain Source Voltage- : VDSS=60V(Min) Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max) Fast Switching Speed Low Drive Requirement Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Hi

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
50N06F N-CHANNEL MOSFET CHONGQING PINGYANG
50N06 N-CHANNEL MOSFET CHONGQING PINGYANG
50N06 Low voltage high current power MOSFET ETC
50N06 N-Channel MOSFET Transistor Inchange Semiconductor
50N06 N-CHANNEL POWER MOSFET UTC

Other Datasheets by Inchange Semiconductor

Part Number Description
50N15 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=27A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor’s B+ function ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 27 ID A Drain Current-continuous@ TC=100℃ 19 Ptot Total Dissipation@TC=25℃ 45 W Tj Max.