50N15 - N-Channel MOSFET

Inchange Semiconductor

Key Features

Drain Current.
ID= 12A@ TC=25℃.
Drain Source Voltage- : VDSS= 150V (Min).
Static Drain-Source On-Resistance : RDS(on).

50N15 n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	50N15
Manufacturer	Inchange Semiconductor
File Size	211.67 KB
Description	N-Channel MOSFET
Datasheet	50N15 Datasheet

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor 50N15 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V (Min) ·Static Drain-Source On-Resistance : RDS(on) <23mΩ ·Avalanche Energy Specified ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for in a wide variety of applocations. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Plused 210 A Ptot Total Dissipation@TC=25℃ 220 W Tj Max.