Inchange Semiconductor 5N50
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 5N50 |
|---|---|
| Datasheet | 5N50 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | TO-220F N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●Drain Current: ID= 5A@ TC=25℃●Drain Source Voltage- : VDSS= 500V(Min)
●Fast Switching Speed
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●General purpose power amplifierABSOLUTE MAXIMUM RATINGS
(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 5 A ID(puls) Pulse Drain Current 18 A Ptot Total Dissipation@TC=25℃ 35 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.57 ℃/W 5N50 isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor
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ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=5A ;VGS= 0 RDS(...