VBsemi Electronics 5N50
N-Channel Power MOSFET
| Part No. | 5N50 |
|---|---|
| Datasheet | 5N50 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low Gate Charge Qg Results in Simple Drive Requirement● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT
● Fully Characterized Capacitance and Avalanche Voltage and Current
● Compliant to RoHS directive 2002/95/EC TO-252 D GDS Top View G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 3.2 A (see fig.
