Inchange Semiconductor 5N65
N-Channel MOSFET Transistor
| Part No. | 5N65 |
|---|---|
| Datasheet | 5N65 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current ID= 5A@ TC=25℃●Drain Source Voltage : VDSS= 650V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 2.4Ω(Max) @VGS = 10 V
●Avalanche Energy Specified
●Fast Switching
●Simple Drive Requirements
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●Designed for high efficiency switch mode power supply.●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 5 A IDM Drain Current-Single Plused 20 A PD Total Dissipation @TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case 1.2 ℃/W Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor
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ELECTRICAL CHARACTERISTICS
TC=25℃ unle...