Datasheet4U Logo Datasheet4U.com

60N06-14 - N-Channel MOSFET

General Description

High current capability Avalanche rugged technology Low gate charge Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Regulator High current,high speed switching Solenoid and relay driver

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
60N06 N-CHANNEL POWER MOSFET UTC
60N06 N-Channel Enhancement Mode Power MOSFET GOFORD
60N03 Power MOSFET Tuofeng Semiconductor
60N03 N-Channel MOSFET Anachip
60N03 N-Channel MOSFET Cmos

Other Datasheets by Inchange Semiconductor

Part Number Description
60N06-18 N-Channel MOSFET
60N06 TO-220F N-Channel MOSFET Transistor
60N05-16 N-Channel MOSFET
60NF06 N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor 60N06-14 ·DESCRIPTION ·High current capability ·Avalanche rugged technology ·Low gate charge ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Regulator ·High current,high speed switching ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 60 ID A Drain Current-continuous@ TC=100℃ 50 ID(puls) Pulse Drain Current 240 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.