Inchange Semiconductor 70N06
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 70N06 |
|---|---|
| Datasheet | 70N06 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | TO-220F N-Channel MOSFET Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Drain Current ID=70A@ TC=25℃●Drain Source Voltage- : VDSS=60V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 14mΩ(Max)
●Fast Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in applications such as swithing Regulators,switching convertes, motor drivers and Relay drivers.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 70 A PD Power Dissipation @TC=25℃ 40 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 3.125 ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor 70N06●
ELECTRICAL CHARACTERISTICS
(TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID...