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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
70N06
DESCRIPTION ·Drain Current ID=70A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 14mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in applications such as swithing Regulators,switching convertes, motor drivers and Relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
70
A
PD
Power Dissipation @TC=25℃
40
W
Tj
Max.
70N06 Datasheet
