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70N06 Datasheet To-3 N-channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 70N06.

General Description

·Drain Current ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 60 ±30 70 V V A ID(puls) Pulse Drain Current 280 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max.

Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 0.5 ℃/W 62.5 ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro .fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 70N06 SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance CONDITIONS VGS= 0;

ID= 250µA VDS= VGS;

70N06 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Fairchild Semiconductor Logo 70N06 RFP70N06 Fairchild Semiconductor
INCHANGE Logo 70N06 TO-220F N-Channel MOSFET Transistor INCHANGE
INCHANGE Logo 70N06 TO-220C N-Channel MOSFET Transistor INCHANGE
UTC Logo 70N06 N-CHANNEL POWER MOSFET UTC

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70N10 N-Channel MOSFET Transistor

70N06 Distributor