Inchange Semiconductor 8N65
N-Channel Mosfet Transistor
| Part No. | 8N65 |
|---|---|
| Datasheet | 8N65 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel Mosfet Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current –ID= 8A@ TC=25℃●Drain Source Voltage- : VDSS= 650V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max)
●Avalanche Energy Specified
●Fast Switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●High efficiency switch mode power supply
●PWM motor controls
●High efficient DC to DC converters
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 32 A PD Total Dissipation @TC=25℃ 147 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.85 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor 8N65
ELECTRICAL CHARACTERISTICS
TC=...