Unisonic Technologies 8N65
8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.| Part No. | 8N65 |
|---|---|
| Datasheet | 8N65 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) < 1.4Ω@VGS = 10 V * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness● SYMBOL Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 8N65L-TA3-T 8N65G-TA3-T 8N65L-TF3-T 8N65G-TF3-T 8N65L-TF1-T 8N65G-TF1-T 8N65L-TF3T-T 8N65G-TF3T-T 8N65L-T2Q-T 8N65G-T2Q-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-220F3 TO-262 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-591.D 8N65
● MARKING INFORMATION PACKAGE TO-220 TO-220F TO-220F1 TO-220F3 TO-262 MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 9 QW-R502-591.D 8N65 Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 650 V VGSS ±30 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) A...
