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8N90A Datasheet

Manufacturer: Inchange Semiconductor
8N90A datasheet preview

8N90A Details

Part number 8N90A
Datasheet 8N90A-INCHANGE.pdf
File Size 213.46 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
8N90A page 2

8N90A Overview

·Avalanche rugged technology ·Rugged gate oxide technology ·Lower input capacitance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier · RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A ID(puls) Pulse Drain Current 32 A Ptot Total...

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