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8N90A - N-Channel MOSFET

General Description

Avalanche rugged technology Rugged gate oxide technology Lower input capacitance Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER V

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Avalanche rugged technology ·Rugged gate oxide technology ·Lower input capacitance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A ID(puls) Pulse Drain Current 32 A Ptot Total Dissipation@TC=25℃ 240 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.52 ℃/W 8N90A isc website：www.iscsemi.