Datasheet Details
| Part number | 8N90 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 52.34 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 8N90-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 8N90.
| Part number | 8N90 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 52.34 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 8N90-InchangeSemiconductor.pdf |
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·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 900 ±20 8 V V A ID(puls) Pulse Drain Current 32 A Ptot Total Dissipation@TC=25℃ 240 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.7 ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro .fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 8N90 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage VGS= 0;
ID=1mA VDS= VGS;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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8N90 | 900V N-CHANNEL MOSFET | Unisonic Technologies |
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8N90-FC | N-CHANNEL POWER MOSFET | UTC |
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8N90A | N-Channel MOSFET | INCHANGE |
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8N90K5 | N-channel Power MOSFET | STMicroelectronics |
| Part Number | Description |
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