Datasheet Details
| Part number | 9N80A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.48 KB |
| Description | N-Channel MOSFET |
| Datasheet | 9N80A-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor ·.
| Part number | 9N80A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.48 KB |
| Description | N-Channel MOSFET |
| Datasheet | 9N80A-INCHANGE.pdf |
|
|
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·Avalanche rugged technology ·Rugged gate oxide technology ·Lower input capacitance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 9 A ID(puls) Pulse Drain Current 36 A Ptot Total Dissipation@TC=25℃ 240 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.52 ℃/W 9N80A isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID=0.25mA VGS(th) Gate Threshold Voltage VDS= VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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9N80 | N-Channel MOSFET Transistor | Inchange Semiconductor |
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9N80 | N-CHANNEL MOSFET | Unisonic Technologies |
| Part Number | Description |
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