9N80 Description
The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and mutation mode.
9N80 Key Features
- RDS(on) = 1.3Ω @VGS = 10 V
- Improved Gate Charge
- Lower Input Capacitance
- Lower Leakage Current: 25μA (Max.) @ VDS = 800V
- SYMBOL
- ORDERING INFORMATION