AM30N10 - N-Channel MOSFET

Inchange Semiconductor

Key Features

With TO-252( DPAK ) packaging.
High speed switching.
Very high commutation ruggedness.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

AM30N10 n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	AM30N10
Manufacturer	Inchange Semiconductor
File Size	204.37 KB
Description	N-Channel MOSFET
Datasheet	AM30N10 Datasheet

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor AM30N10 ·FEATURES ·With TO-252( DPAK ) packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·LED backlighting ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 36 IS Continuous-Source Current 30 PD Total Dissipation 50 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resi