Full PDF Text Transcription for AOD484 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AOD484 . For precise diagrams, and layout, please refer to the original PDF.
Isc N-Channel MOSFET Transistor AOD484 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Mini...
View more extracted text
nd gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 25 20 80 PD Total Dissipation @TC=25℃ 50 Tch Max.
📁 Similar Datasheet
Brand Logo
Part Number
Description
Manufacturer
AOD484
N-Channel MOSFET
Alpha & Omega Semiconductors
AOD484
N-Channel MOSFET
VBsemi
More Datasheets from Inchange Semiconductor