Datasheet4U Logo Datasheet4U.com

AOI4T60 - N-Channel MOSFET

Datasheet Summary

Description

purpose applications.

Features

  • Drain Current.
  • ID= 4.0A@ TC=25℃.
  • Drain Source Voltage- : VDSS=600V(Min).
  • Static Drain-Source On-Resistance : RDS(on) =2.1Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – AOI4T60

Datasheet Details

Part number AOI4T60
Manufacturer INCHANGE
File Size 269.09 KB
Description N-Channel MOSFET
Datasheet download datasheet AOI4T60 Datasheet
Additional preview pages of the AOI4T60 datasheet.

📁 Similar Datasheet

  • AOI4T60 - 4A N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOI4T60P - 4A N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOI403 - 30V P-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOI409 - 60V P-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOI4102 - 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOI4126 - 100V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOI4130 - 60V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOI4146 - 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOI418 - 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
  • AOI4184 - 40V N-Channel MOSFET (Alpha & Omega Semiconductors)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor AOI4T60 FEATURES ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2.1Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4.0 A IDM Drain Current-Single Pluse 16 A PD Total Dissipation @TC=25℃ 83 W TJ Max.
Published: |