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APT66M60B2 - N-Channel MOSFET

Features

  • Static Drain-Source On-Resistance : RDS(on) = 90mΩ(Max).
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number APT66M60B2
Manufacturer INCHANGE
File Size 235.07 KB
Description N-Channel MOSFET
Datasheet download datasheet APT66M60B2 Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 90mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 66 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 1135 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.
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