| Part Number | APT66M60B2 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 90mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance a.
*Static Drain-Source On-Resistance : RDS(on) = 90mΩ(Max) *Fast Switching *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION *Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS. |