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BC337 - NPN Transistor

General Description

Low Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

For AF-Driver stages and low power output stages.

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isc Silicon NPN Transistor DESCRIPTION ·Low Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For AF-Driver stages and low power output stages. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range BC337 VALUE UNIT 50 V 45 V 5 V 800 mA 625 mW 150 ℃ -55~150 ℃ isc website:www.iscsemi.