BC337 Overview
·Low Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For AF-Driver stages and low power output stages. 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC=100μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA;.


