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isc Silicon NPN Transistor
DESCRIPTION ·Low Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For AF-Driver stages and low power output stages.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
BC337
VALUE
UNIT
50
V
45
V
5
V
800
mA
625
mW
150
℃
-55~150
℃
isc website:www.iscsemi.