SeCoS Halbleitertechnologie GmbH BC337
NPN Plastic-Encapsulate Transistors
| Part No. | BC337 |
|---|---|
| Datasheet | BC337 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Plastic-Encapsulate Transistors |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Total Device Dissipation Junction, Storage Temperature BC337 BC338 BC337 BC338 VCBO VCEO VEBO IC PD TJ, TSTG 50 30 45 25 5 800 625 150, -55~150 Unit V V V mA mW °C 04-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente BC337 / BC338 NPN Plastic-Encapsulate TransistorELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown BC337 Voltage BC338 Collector to Emitter Breakdown BC337 Voltage BC338 Emitter to Base Breakdown Voltage Collector Cut-Off Current BC337 BC338 Collector Cut-Off Current BC337 BC338 Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transitio...
