onsemi BC337
NPN Epitaxial Silicon Transistor
| Part No. | BC337 |
|---|---|
| Datasheet | BC337 Download |
| Manufacturer |  onsemi |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Switching and AmplifierAPPLICATIONS
● Suitable for AF−Driver Stages and Low−Power Output Stages● Complement to BC327/BC328
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCES Collector−Emitter Voltage 50 V VCEO Collector−Emitter Voltage 45 V VEBO Emitter−Base Voltage 5 V IC Collector Current (DC) 800 mA TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) (Note 1) Symbol Characteristic Value Unit PD Power Dissipation Derate Above 25°C 625 mW 5.0 mW/°C RqJA Thermal Resistance, Junction to Ambient 200 °C/W 1. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size. DATA SHEET 1. Collector 2. Base 3.
