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BC847 - NPN Transistor

General Description

DC Current Gain- : hFE=110-800 @IC= 2mA Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Ideally suited for automatic insertion.

For switching and AF amplifier applicat

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isc Silicon NPN Plastic-Encapsulate Transistors BC847 DESCRIPTION ·DC Current Gain- : hFE=110-800 @IC= 2mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ideally suited for automatic insertion. ·For switching and AF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature VALUE 50 45 6 0.1 0.2 150 -65~150 UNIT V V V A W ℃ ℃ isc website： www.iscsemi.