Datasheet Details
| Part number | BC847 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.04 KB |
| Description | NPN Transistor |
| Datasheet | BC847-INCHANGE.pdf |
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Overview: isc Silicon NPN Plastic-Encapsulate Transistors BC847.
| Part number | BC847 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.04 KB |
| Description | NPN Transistor |
| Datasheet | BC847-INCHANGE.pdf |
|
|
|
·DC Current Gain- : hFE=110-800 @IC= 2mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ideally suited for automatic insertion.
·For switching and AF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature VALUE 50 45 6 0.1 0.2 150 -65~150 UNIT V V V A W ℃ ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Plastic-Encapsulate Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
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|---|---|---|---|
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| Part Number | Description |
|---|---|
| BC807-40 | PNP Transistor |