Inchange Semiconductor BC847
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BC847 |
|---|---|
| Datasheet | BC847 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain- : hFE=110-800 @IC= 2mA●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Ideally suited for automatic insertion.●For switching and AF amplifier applications.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature VALUE 50 45 6 0.1 0.2 150 -65~150 UNIT V V V A W ℃ ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Plastic-Encapsulate TransistorsELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA; IC= 0 VCE(sat) Collector-Emitter Sat...