Datasheet4U Logo Datasheet4U.com

BD180 - PNP Transistor

General Description

DC Current Gain- : hFE= 40-250(Min)@ IC= -0.15A Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -80V(Min) Complement to type BD179 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switch

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BD180 Plastic Medium Power Silicon PNP Transistor Motorola Inc
BD180 POWER TRANSISTOR PNP SILICON ON Semiconductor
BD180 PNP Epitaxial Silicon Transistor Fairchild Semiconductor
BD180 EPITAXIAL SILICON POWER TRANSISTORS TRANSYS
BD180 EPITAXIAL SILICON POWER TRANSISTORS CDIL

Other Datasheets by Inchange Semiconductor

Part Number Description
BD112 NPN Transistor
BD116 NPN Transistor
BD117 NPN Transistor
BD131 NPN Transistor
BD132 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor BD180 DESCRIPTION ·DC Current Gain- : hFE= 40-250(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -80V(Min) ·Complement to type BD179 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications.